ATF-26836 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 2-16 GHz General Purpose Gallium Arsenide FET

2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
• High Output Power:
18.0␣ dBm Typical P _1dB at 12␣ GHz
• High Gain:
9.0 dB Typical G_SS at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available^[1]
Description
The ATF-26836 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16␣ GHz frequency range.
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units
G_SS
Tuned Small Signal Gain: V_DS = 5 V, I_DS = 30 mA
NF_O Optimum Noise Figure: V_DS = 3 V, I_DS = 10 mA
G_A
Gain @ NF_O: V_DS = 3 V, IDS = 10 mA
f = 12.0 GHz dB
f = 12.0 GHz dB
f = 12.0 GHz dB
P_{1 dB}
g_m
Power Output @ 1 dB Gain Compression:
V_DS = 5 V, I_DS = 30 mA
Transconductance: V_DS = 3 V, V_GS = 0 V
f = 12.0 GHz dBm
mmho
I_DSS
Saturated Drain Current: V_DS = 3 V, V_GS = 0 V
mA
V_P
Pinch-off Voltage: V_DS = 3 V, I_DS = 1 mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Min.
7.0
15.0
15
30
-3.5
Typ.
9.0
2.2
6.0
18.0
35
50
-1.5
Max.
90
-0.5
5-67
5965-8704E