ATF-25735 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 0.5-10 GHz General Purpose Gallium Arsenide FET

0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power:
19.0␣ Bm Typical P _1dB at 4␣ GHz
• High Gain:
12.5␣ dB Typical G _{1 dB} at 4 GHz
• Low Noise Figure:
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
35 micro-X Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
NF_O Optimum Noise Figure: V_DS = 3 V, I_DS = 20 mA
G_A
Gain @ NF_O: V_DS = 3 V, I_DS = 20 mA
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression:
V_DS =5 V, I_DS = 50 mA
1 dB Compressed Gain: V_DS = 5 V, I_DS =50 mA
Transconductance: V_DS =3 V, V_GS = 0 V
Saturated Drain Current: V_DS =3 V, V_GS = 0 V
Pinch-off Voltage: V_DS = 3 V, I_DS = 1 mA
Units
f = 2. 0 GHz dB
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz dB
f = 4.0 GHz
f =.6.0 GHz
f = 4.0 GHz dBm
Min.
11.5
Typ.
1.0
1.2
1.4
15.0
13.0
10.5
19.0
Max.
1.5
f = 4.0 GHz dB
mmho 50
mA 50
V -3.0
12.5
80
100 150
-2.0 -0.8
5-63
5965-8710E