ATF-25170 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 0.5-10 GHz Low Noise Gallium Arsenide FET

0.5 – 10 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure:
0.8␣ dB Typical at 4␣ GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• High Output Power:
21.0␣ dBm Typical P _1dB at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-25170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high reliabil-
ity package. Its noise figure makes
this device appropriate for use in
low noise amplifiers operating in
the 0.5-10 GHz frequency range.
70 mil Package
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
NF_O Optimum Noise Figure: V_DS = 3 V, I_DS = 20 mA
G_A
Gain @ NF_O: V_DS =3 V, I_DS = 20 mA
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression:
V_DS =5 V, I_DS =50 mA
1 dB Compressed Gain: V_DS =5 V, I_DS =50 mA
Transconductance: V_DS = 3 V, V_GS = 0 V
Saturated Drain Current: V_DS =3 V, V_GS = 0 V
Pinch-off Voltage: V_DS = 3 V, I_DS = 1 mA
f = 4.0 GHz
f = 6 0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
Min.
13.0
Typ.
0.8
1.0
1.2
14.0
11.5
9.0
21.0
Max.
1.0
f = 4.0 GHz dB
mmho 50
mA 50
V -3.0
15.0
80
100 150
-2.0 -0.8
5-57
5965-8712E