ATF-21170 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 0.5-6 GHz Low Noise Gallium Arsenide FET

0.5– 6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
Features
• Low Noise Figure:
0.9 dB Typical at 4␣ GHz
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power:
23.0␣ dBm Typical P _1dB at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-21170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applica-
tions in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
70 mil Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
NF_O Optimum Noise Figure: V_DS = 3 V, I_DS = 20 mA
G_A
Gain @ NF_O: V_DS = 3 V, I_DS = 20 mA
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression:
V_DS =5 V, I_DS = 80 mA
1 dB Compressed Gain: V_DS = 5 V, I_DS = 80 mA
Transconductance: V_DS =3 V, V_GS = 0 V
Saturated Drain Current: V_DS = 3 V, V_GS = 0 V
Pinch-off Voltage: V_DS = 3 V, I_DS = 1 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
Units
dB
dB
dB
dB
dB
dB
dBm
Min.
12.0
Typ.
0.6
0.9
1.2
16.0
13.0
10.0
23.0
Max.
1.1
f = 4.0 GHz dB
mmho 70
mA 80
V -3.0
13.0
120
120 200
-1.5 -0.8
5965-8718E
5-46