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ATF-13736 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 2-16 GHz Low Noise Gallium Arsenide FET | |||
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2â16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
Features
⢠Low Noise Figure:
1.8⣠dB Typical at 12⣠GHz
⢠High Associated Gain:
9.0⣠dB Typical at 12⣠GHz
⢠High Output Power:
17.5⣠dB Typical at 12⣠GHz
⢠Cost Effective Ceramic
Microstrip Package
⢠Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
36 micro-X Package
250⣠microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
NFO Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
GA
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz dB
f = 12.0 GHz dB
f = 14.0 GHz dB
f = 8.0 GHz dB
f = 12.0 GHz dB
f = 14.0 GHz dB
P1 dB
G1 dB
gm
IDSS
VP
Power Output @ 1 dB Gain Compression:
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA
Transconductance: VDS = 2.5 V, VGS = 0 V
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA
f=12.0GHz dBm
f = 12.0 GHz dB
mmho
mA
V
Note:
1. Refer to PACKAGING section âTape-and-Reel Packaging for Surface Mount Semiconductorsâ.
Min.
8.0
25
40
-4.0
Typ.
1.5
1.8
2.1
11.5
9.0
7.0
17.5
8.5
55
50
-1.5
Max.
2.2
90
-0.5
5-39
5965-8722E
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