ATF-13336 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 2-16 GHz Low Noise Gallium Arsenide FET

2 – 16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13336
Features
• Low Noise Figure:
1.4␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dBm Typical P _{1 dB} at
12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available^[1]
Description
The ATF-13336 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective micro-
strip package. Its premium noise
figure makes this device appropri-
ate for use in low noise amplifiers
operating in the 2-16␣ GHz
frequency range.
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
NF_O Optimum Noise Figure: V_DS = 2.5 V, I_DS = 20 mA
G_A
Gain @ NF_O: V_DS = 2.5 V, I_DS = 20 mA
Units
f = 8.0 GHz dB
f = 12.0 GHz dB
f = 14.0 GHz
f = 8.0 GHz dB
f = 12.0 GHz dB
f = 14.0 GHz dB
Min.
8.0
Typ.
1.2
1.4
1.6
11.5
9.0
7.5
Max.
1.6
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression:
V_DS = 4 V, I_DS = 40 mA
1 dB Compressed Gain: V_DS = 4 V, I_DS = 40 mA
f = 12.0 GHz dBm
f = 12.0 GHz dB
g_m
Transconductance: V_DS = 2.5 V, V_GS = 0 V
mmho 25
I_DSS
Saturated Drain Current: V_DS = 2.5 V, V_GS = 0 V
mA 40
V_P
Pinch-off Voltage: V_DS = 2.5 V, I_DS = 1 mA
V -4.0
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
17.5
8.5
55
50 90
-1.5 -0.5
5965-8724E
5-36