ATF-13100 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 2-18 GHz Low Noise Gallium Arsenide FET

2–18 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13100
Features
This GaAs FET device has a
Chip Outline
• Low Noise Figure:
1.1 dB Typical at 12 GHz
• High Associated Gain:
9.5 dB Typical at 12 GHz
• High Output Power:
17.5 dBm Typical P_{1 dB} at 12 GHz
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
D
S
S
The recommended mounting
G
Description
procedure is to die attach at a
The ATF-13100 is a high perfor-
stage temperature of 300°C using
mance gallium arsenide Schottky- a gold-tin preform under forming
barrier-gate field effect transistor gas. Assembly can be preformed
chip. This device is designed for with either wedge or ball bonding
use in low noise, wideband
using 0.7 mil gold wire. See also
amplifier and oscillator applica- “Chip Use” in the APPLICATIONS
tions in the 2-18␣ GHz frequency
section.
range.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
Units Min. Typ. Max.
NF_O Optimum Noise Figure: V_DS = 2.5 V, I_DS = 20 mA
G_A
Gain @ NF_O; V_DS = 2.5 V, I_DS = 20 mA
f = 8.0 GHz dB
f = 12.0 GHz dB
f = 15.0 GHz dB
0.8
1.1 1.2
1.5
f = 8.0 GHz dB
12.0
f = 12.0 GHz dB 9.0 9.5
f = 15.0 GHz dB
8.0
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression
V_DS = 4 V, I_DS = 40 mA
1 dB Compressed Gain; V_DS = 4 V, I_DS = 40 mA
Transconductance: V_DS = 2.5 V, V_GS = 0 V
Saturated Drain Current; V_DS = 2.5 V, V_GS = 0 V
Pinchoff Voltage: V_DS = 2.5 V, I_DS = 1 mA
f = 12.0 GHz dBm
17.5
f = 12.0 GHz dB
mmho 30
mA 40
V -3.0
8.5
55
50 90
-1.5 -0.8
Note:
1. RF performance is determined by assembling and testing 10 samples per wafer.
5-33
5965-8694E