ATF-10236 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 0.5-12 GHz Low Noise Gallium Arsenide FET

0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10236
Features
• Low Noise Figure:
0.8␣ dB Typical at 4␣ GHz
• Low Bias:
V_DS= 2 V, I_DS= 20␣ mA
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• High Output Power: 20.0␣ dBm
Typical P_1dBat 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-And-Reel Packaging
Option Available ^[1]
Description
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operating in the 0.5-12␣ GHz frequency
range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units Min.
NF_O Optimum Noise Figure: V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
f = 4.0 GHz dB
f = 6.0 GHz dB
G_A
Gain @ NF_O; V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
f = 4.0 GHz dB 12.0
f = 6.0 GHz dB
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression
V_DS = 4 V, I_DS = 70 mA
1 dB Compressed Gain: V_DS = 4 V, I_DS = 70 mA
Transconductance: V_DS = 2 V, V_GS = 0 V
Saturated Drain Current: V_DS = 2 V, V_GS = 0 V
Pinchoff Voltage: V_DS = 2 V, I_DS = 1 mA
f = 4.0 GHz dBm
f = 4.0 GHz dB
mmho 80
mA 70
V -3.0
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Typ.
0.6
0.8
1.0
16.5
13.0
10.5
20.0
12.0
140
130
-1.3
Max.
1.0
180
-0.8
5965-8697E
5-26