ATF-10136 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 0.5-12 GHz Low Noise Gallium Arsenide FET

0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10136
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
V_DS =2V,I_DS␣ =␣ 20mA
• High Associated Gain:
13.0 dB Typical at 4 GHz
• High Output Power:
20.0 dBm Typical P_{1 dB} at 4 GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and Reel Packaging
Option Available ^[1]
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units
NF_O Optimum Noise Figure: V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
f = 4.0 GHz dB
f = 6.0 GHz dB
G_A
Gain @ NFO; V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
f = 4.0 GHz dB
f = 6.0 GHz dB
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression
V_DS = 4 V, I_DS = 70 mA
1 dB Compressed Gain: V_DS = 4 V, I_DS = 70 mA
Transconductance: V_DS = 2 V, V_GS = 0 V
Saturated Drain Current: V_DS = 2 V, V_GS = 0 V
Pinchoff Voltage: V_DS = 2 V, I_DS = 1 mA
f = 4.0 GHz dBm
f = 4.0 GHz dB
mmho
mA
V
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Min.
12.0
70
70
-4.0
Typ.
0.4
0.5
0.8
16.5
13.0
11.0
20.0
12.0
140
130
-1.3
Max.
0.6
180
-0.5
5-23
5965-8701E