ATF-10100 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 0.5-12 GHz Low Noise Gallium Arsenide FET

0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10100
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
V_DS =2V,I_DS␣ =␣ 25mA
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P_{1 dB} at 4 GHz
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12␣ GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
Chip Outline
G
S
D
G
S
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
NF_O Optimum Noise Figure: V_CE = 2 V, I_DS = 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
G_A
Gain @ NF_O; V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
P_{1 dB}
G_{1 dB}
g_m
I_DSS
V_P
Power Output @ 1 dB Gain Compression
V_DS = 4 V, I_DS = 70 mA
1 dB Compressed Gain: V_DS = 4 V, I_DS = 70 mA
Transconductance: V_DS = 2 V, V_GS = 0 V
Saturated Drain Current: V_DS = 2 V, V_GS = 0 V
Pinchoff Voltage: V_DS = 2 V, I_DS = 1 mA
f = 4.0 GHz
f = 4.0 GHz
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
Units
dB
dB
dB
dB
dB
dB
dBm
dB
mmho
mA
V
Min.
12.0
80
70
-3.0
Typ.
0.4
0.55
0.8
17.0
14.0
12.0
21.0
15.0
140
130
-1.3
Max.
0.7
180
-0.8
5-19
5965-8702E