AT41586 Datasheet, PDF (1/6 Pages) Agilent(Hewlett-Packard) – Low Cost General Purpose Transistors

Low Cost General Purpose
Transistors
Technical Data
AT-41586
Features
• Low Noise Figure
1.4 dB Typical at 1 GHz
1.7 dB Typical at 2 GHz
• High Associated Gain
17.0 dB Typical at 1 GHz
12.5 dB Typical at 2 GHz
• Low Cost Surface Mount
Package
• Tape and Reel Option
Available
24
21
18
15
12
9
6
3
0
0.5
G_A
4
NF_O
2
0
1.0
2.0 3.0 4.0
FREQUENCY (GHz)
Figure 1. AT-41586 Noise Figure and
Associated Gain vs. Frequency at
V_CE = 8 V, I_C = 10 mA.
Description
Hewlett-Packard’s AT-41586 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41586 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω in the 1 to 2 GHz
frequency range, makes this
device easy to use as a low noise
amplifier.
The AT-41586 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f_T Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
86 Plastic Package
Pin Connections
EMITTER
4
BASE
1
COLLECTOR
3
2
EMITTER
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.