AT-42085 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power

Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42085
Features
• High Output Power:
20.5 dBm Typical P_{1 dB} at 2.0␣ GHz
• High Gain at 1 dB
Compression:
14.0 dB Typical G_1dBat 2.0␣ GHz
• Low Noise Figure:
2.0 dB Typical NF_Oat 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f_T
• Low Cost Plastic Package
Description
Hewlett-Packard’s AT-42085 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42085 is housed in a low cost
.085" diameter plastic package.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigi-
tated geometry yields a medium
sized transistor with impedances
that are easy to match for low
noise and medium power applica-
tions. Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50␣ Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
85 Plastic Package
The AT-42085 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f_T Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-169
5965-8913E