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ABA-54563 Datasheet, PDF (1/11 Pages) Agilent(Hewlett-Packard) – 3.4 GHz Broadband Silicon RFIC Amplifier
Agilent ABA-54563
3.4 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Description
Agilent ’s ABA-54563 is an economi-
cal, easy-to-use internally 50-ohm
matched silicon monolithic amplifier
that offers excellent gain and
broadband response from DC to
3.4 GHz. Packaged in an ultraminia-
ture industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
At 2 GHz, the ABA-54563 offers a
small-signal gain of 23 dB, output
P1dB of 16.1 dB and 27.8 dBm
output third order intercept point.
It is suitable for use as buffer
amplifiers for wideband applica-
tions. They are designed for low
cost gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communications systems.
At IF frequencies, the ABA-54563
offers good linearity performance
with a typical OIP3 of 35 dBm at
200 MHz.
ABA-54563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon process
with self-aligned submicron emitter
geometry. The process is capable of
simultaneous high fT and high NPN
breakdown (25 GHz fT at 6V BVCEO).
The process utilizes industry stan-
dard device oxide isolation technolo-
gies and submicron aluminum
multilayer interconnect to achieve
superior performance, high unifor-
mity and proven reliability.
Surface Mount Package
SOT-363 /SC70
Pin Connections and
Package Marking
GND 1
GND 2
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Simplified Schematic
Vcc
RF
Input
Ground 2
Ground 3
Features
• Single +5V Supply
• High linearity
• VSWR < 1.4 throughout operating
frequency
• Miniature SOT363 (SC70) Package
• Unconditionally stable
• Lead-free
Typical Performance at +5V/79 mA
2 GHz
• 23 dB Gain
• 27.8 dBm OIP3
• 16.1 dBm P1dB
• 4.4 dB Noise Figure
200 MHz
• 23 dB Gain
• 35 dBm OIP3
• 18 dBm P1dB
• 3.6 dB Noise Figure
RF
Output
& Vcc
Ground 1