ABA-32563 Datasheet, PDF (1/8 Pages) Agilent(Hewlett-Packard) – 2.5 GHz Broadband Silicon RFIC Amplifier

Agilent ABA-32563
2.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating Frequency DC ~ 2.5 GHz
• 19 dB Gain
• VSWR < 2.0 throughout operating
frequency
• 8.4 dBm Output P1dB
Description
Agilent’s ABA-32563 is an
economical, easy-to-use, inter-
nally 50Ω matched, silicon
monolithic broadband amplifier
that offers excellent gain and
broadband response from DC to
2.5 GHz. Packaged in an ultra-
miniature SOT-363 package, it
requires half the board space of
a SOT-143 package.
At 2 GHz, the ABA-32563 offers
a small-signal gain of 19 dB,
output P1dB of 8.4 dBm and
19.5 dBm output third order
intercept point. It is suitable for
use as wideband applications.
They are designed for low cost
gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communication systems.
Surface Mount Package
SOT-363 /SC70
Pin Connections and
Package Marking
GND 1
GND 2
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is the date code.
• 19.5 dBm Output IP3
• 3.5 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 37 mA)
• Lead-free
Applications
• Amplifier for Cellular, Cordless,
Special Mobile Radio, PCS, ISM,
Wireless LAN, DBS, TVRO, and TV
Tuner Applications
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
ABA-32563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high f_T and high NPN
breakdown (25 GHz f_T at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Simplified Schematic
Vcc
RF
Input
Ground 2
Ground 3
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
RF
Output
& Vcc
Ground 1