1N5719 Datasheet, PDF (1/4 Pages) Advanced Semiconductor – SILICON PIN DIODE

PIN Diodes for RF Switching
and Attenuating
Technical Data
1N5719, 1N5767,
5082-3001, 5082-3039,
5082-3077, 5082-3080/81,
5082-3188, 5082-3379
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
Description/Applications
These general purpose switching
diodes are intended for low
power switching applications
such as RF duplexers, antenna
switching matrices, digital phase
shifters, and time multiplex
filters. The 5082-3188 is
optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode
is a function of the current
flowing in the diode. These
current controlled resistors are
specified for use in control
applications such as variable RF
attenuators, automatic gain
control circuits, RF modulators,
electrically tuned filters, analog
phase shifters, and RF limiters.
Outline 15 diodes are available on
tape and reel. The tape and reel
specification is patterned after
RS-296-D.
0.41 (.016)
0.36 (.014)
1.93 (.076)
1.73 (.068)
CATHODE
25.4 (1.00)
MIN.
4.32 (.170)
3.81 (.150)
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Outline 15
Maximum Ratings
Junction Operating and
Storage Temperature Range ................................................ -65°C to +150°C
Power Dissipation 25°C ..................................................................... 250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ........................................................ same as V_BR
Maximum Soldering Temperature ....................................... 260°C for 5 sec