AO3407 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3407 Typical Characteristics
Plastic-Encapsulate Mosfets
10
V_DS=-15V
8
I_D=-4.1A
6
4
2
0
0
2
4
6
8
10
Q_g (nC)
Figure 7: Gate-Charge Characteristics
800
600
C_iss
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
R_DS(ON)
limited
10µs
100µs
1ms
1100mmss
0.1
T_J(Max)=150°C
10s
T_A=25°C
DC
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
40
T_A=25°C
30
20
10
0
0.0001
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1 R_θJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
Single Pulse
P_D
T_on
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
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