AO3409 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

Plastic-Encapsulate Mosfets
AO3409
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
R_DS(ON) Static Drain-Source On-Resistance
g_FS
Forward Transconductance
V_SD
Diode Forward Voltage
I_S
Maximum Body-Diode Continuous Current
I_D=-250 A, V_GS=0V
-30
V_DS=-30V, V_GS=0V
-1
T_J=55°C
-5
V_DS=0V, V_GS= ±20V
±100
V_DS=V_GS I_D=-250 A
-1.4
-1.9
-2.4
V_GS=-10V, V_DS=-5V
-20
V_GS=-10V, I_D=-2.6A
77
110
T_J=125°C
100
140
V_GS=-4.5V, I_D=-2A
125
180
V_DS=-5V, I_D=-2.6A
5
I_S=-1A,V_GS=0V
-0.8
-1
-1.5
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
197
240
42
26
37
3.5
7.2
11.0
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
4.3
5.2
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=-10V, V_DS=-15V, I_D=-2.6A
2.2
3
0.7
Q_gd
Gate Drain Charge
1.1
t_D(on)
Turn-On DelayTime
7.5
t_r
Turn-On Rise Time
V_GS=-10V, V_DS=-15V, R_L=5.8 ,
4.1
t_D(off)
Turn-Off DelayTime
R_GEN=3
11.8
t_f
Turn-Off Fall Time
3.8
t_rr
Body Diode Reverse Recovery Time
I_F=-2.6A, dI/dt=100A/ us
11.3
14
Q_rr
Body Diode Reverse Recovery Charge
I_F=-2.6A, dI/dt=100A/ us
4.4
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Units
V
uA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
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