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| 2SC2412 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Plastic-Encapsulate Transistors
2SC2412 Typical Characteristics
5
4
3
2
1
0
0
300
V ââ
CE
I
C
20uA
18uA
16uA
COMMON
EMITTER
Ta=25â
14uA
12uA
10uA
8uA
6uA
4uA
IB=2uA
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
ââ I
CEsat
C
100
Ta=100 â
Ta=25â
10
0.1
150
100
1
10
COLLECTOR CURREMT IC (mA)
I ââ V
C
BE
β=10
100 150
10
COMMON EMITTER
VCE=6V
1
0
300
600
900
1200
COLLECTOR CURRENT IC (mA)
50
C /C ââ
ob ib
V /V
CB EB
f=1MHz
IE=0/IC=0
Ta=25 â
C
ib
10
Cob
1
0.1
1
10
20
REVERSE VOLTAGE V (V)
h ââ I
FE
C
500
Ta=100â
Ta=25â
100
10
0.1
1000
800
600
400
0.1
300
100
COMMON EMITTER
VCE= 6V
1
10
COLLECTOR CURRENT IC (mA)
100 150
V ââ I
BEsat
C
Ta=25â
Ta=100 â
1
10
COLLECTOR CURREMT IC (mA)
f ââ
T
I
C
β=10
100 150
10
0.5
1
250
COMMON EMITTER
VCE=12V
Ta=25â
10
100
COLLECTOR CURRENT IC (mA)
P ââ T
C
a
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2
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