TIP41 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W)

FEATURES
Medium Power Linear Switching Applications
Plastic-Encapsulate Transistors
TIP41/A/B/C (NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol TIP41 TIP41A TIP41B TIP41C Unit
Collector-Base Voltage
V_CBO
40
60
80
100
V
Collector-Emitter Voltage
V_CEO
40
60
80
100
V
Emitter-Base Voltage
V_EBO
5
V
Collector Current -Continuous
I_C
6
A
Collector Power Dissipation
PC
2
W
Junction Temperature
T_J
Storage Temperature
Tstg
1. BASE
2. COLLECTOR
3. EMITTER
TO-220
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
TIP41
TIP41A
TIP41B
TIP41C
Collector-emitter breakdown voltage
TIP41
TIP41A
TIP41B
TIP41C
Emitter-base breakdown voltage
Collector cut-off current
TIP41
TIP41A
TIP41B
TIP41C
Collector cut-off current
TIP41/4 1A /41B /41C
Emitter cut-off current
Symbol Test conditions
VCBO
IC= 1mA, IE=0
VCEO
IC= 30mA, IB=0
VEBO
IE= 1mA, IC=0
ICBO
ICEO
IEBO
VCB=40V, IE=0
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
VCE= 30V, IB= 0
VCE= 60V, IB= 0
VEB=5V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE(1) VCE= 4V, IC= 0.3A
hFE(2)
VCE(sat)
VCE=4 V, IC= 3A
IC=6A, IB=0.6A
Base-emitter voltage
Transition frequency
VBE(on
fT
VCE= 4V, IC=6A
VCE=10V , IC=0.5A
f =1MHz
Min
Max
Unit
40
60
80
V
100
40
60
80
V
100
5
V
0.4
0.7
1
30
15
75
1.5
2
3
mA
mA
mA
V
V
MHZ
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