SS8550 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

Plastic-Encapsulate Transistors
FEATURES
Complimentary to SS8050
Marking : Y2
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-25
V_EBO
-5
I_C
-1500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
SS8550 ^(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
VBEF
fT
Cob
Test conditions
IC=-100μA, IE=0
IC=-0.1mA, IB=0
IE=-100μA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
IC=-1V,VCE=-10mA
IB=-1A
VCE= -10V, IC= -50mA
f=30MHz
(VCB=-10V,IE=0,f=1MHz)
Min
-40
-25
-5
120
40
100
Max Umiot
V
V
V
-0.1
μA
-0.1
μA
-0.1
μA
400
-0.5
V
-1.2
V
-1
V
-1.55
V
MHz
20
pF
CLASSIFICATION OF h_FE
Rank
Range
L
120-200
H
200-350
J
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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