SS8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (NPN)

Plastic-Encapsulate Transistors
FEATURES
Complimentary to SS8550
Marking : Y1
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
40
V_CEO
25
V_EBO
5
I_C
1500
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC= 0.1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA, IC=0
Collector cut-off current
Collector cut-off current
ICB
O
ICEO
VCB=40V, IE=0
VCB=20V, IE=0
Emitter cut-off current
IEBO VEB= 5V, IC=0
DC current gain
hFE(1) VCE=1V, IC= 100mA
hFE(2) VCE=1V, IC= 800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=800mA, IB= 80mA
VCE=10V, IC= 50mA
fT
f=30MHz
CLASSIFICATION OF h_FE
Rank
Range
L
120-200
H
200-350
SS8050 (NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
120
400
40
0.5
V
1.2
V
100
MHz
J
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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