SI2305 Datasheet, PDF (1/3 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – P-Channel MOSFET

Plastic-Encapsulate Mosfets
FEATURES
High dense cell design for extremely low R_DS(ON)
Rugged and reliable
Case Material: Molded P lastic.
SI2305
P-Channel MOSFET
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol Ratings Unit
Drain-Source Voltage
VDS
-30
V
Gate-source Voltage
VGS
12
V
Drain Current (Continuous)
Drain Current (Pulsed) ^a
ID
-3.2
A
IDM
-10
A
Total Power Dissipation @TA=25oC
PD
1.38
W
Operating Junction and Storage Temperature Range
Tj, Tstg -55 to +150 °C
Thermal Resistance Junction to Ambient (PCB mounted)^b RθJA
90 °C/W
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
I_DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=70 )
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-250uA
Reference to 25 , ID=-1mA
VGS=-10V, ID=-3.2A
VGS=-4.5V, ID=-3.0A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-3.0A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 12V
ID=-3.2A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-3.2A
RG=3.3Ω,VGS=-10V
RD=4.6Ω
VGS=0V VDS=-25V f=1.0MHz
1.Gate
2.Source
3.Drain
SOT-23
D
G
S
Min. Typ. Max. Unit
-30
-
-
V
-
-0.1
-
V/
-
-
60
mΩ
-
-
80
mΩ
-
-
150 ^mΩ
-
-
250 ^mΩ
-0.5
-
-1.2
V
-
9
-
S
-
-
-1
uA
-
-
-25
uA
-
- ±100
nA
-
10
18
nC
-
1.8
-
nC
-
3.6
-
nC
-
7
-
ns
-
15
-
ns
-
21
-
ns
-
15
-
ns
-
735 1325
pF
-
100
-
pF
-
80
-
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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