SI2301 Datasheet, PDF (1/3 Pages) Micro Commercial Components – P-Channel Enhancement Mode Field Effect Transistor

Plastic-Encapsulate Mosfets
FEATURES
High dense cell design for extremely low R_DS(ON)
Rugged and reliable
Case Material: Molded Plastic.
SI2301
P-Channel MOSFET
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
8
V
Drain Current (Continuous)
Drain Current (Pulsed) ¹
ID
-2.3
A
IDM
-10
A
Total Power Dissipation @TA=25oC
PD
1.25
W
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)²
Tj, Tstg -55 to +150 °C
RθJA
100 °C/W
1.Gate
2.Source
3.Drain
SOT-23
D
G
Electrical Characteristics (TA=25°C, unless otherwise noted)
S
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics ^c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics ^d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BV_DSS
I_DSS
I_GSSF
IGSSR
V_GS(th)
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Test Condition
Min
Typ
Max Unit
V_GS = 0V, I_D = -250µA
V_DS = -20V, V_GS = 0V
V_GS = 8V, V_DS = 0V
V_GS = -8V, V_DS = 0V
V_GS = V_DS, I_D = -250µA
V_GS = -4.5V, I_D = -2.8A
V_GS = -2.5V, I_D = -2.0A
V_DS = -5V, I_D = -2.8A
-20
V
-1
µA
100
nA
-100
nA
-0.45
V
80
120
mΩ
110
150
mΩ
8
S
V_DS = -6V, V_GS = 0V, f = 1.0
880
pF
MHz
270
pF
175
pF
V_DD = -6V, I_D = -1A, V_GS =
-4.5V, R_GEN = 6Ω
11
20
ns
5
10
ns
32
65
ns
23
45
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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