SI2300 Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – 20 V N-Channel Enhancement Mode MOSFET

Plastic-Encapsulate Mosfets
FEATURES
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8
V
Drain Current (Continuous)
Drain Current (Pulsed) ¹
ID
2.4
A
IDM
8
A
Total Power Dissipation @TA=25oC
PD
0.9
W
Maximum Diode Forward Current
IS
1.6
A
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)²
Tj, Tstg -55 to +150 °C
RθJA
140 °C/W
1: Repetitive Rating: Pulse width limited by the maximum junction temperation. 2: 1-in2 2oz Cu PCB board
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
• Off Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
•On Characteristics³
VGS=0V, ID=250uA
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
gFS
Forward Transconductance
•Dynamic Characteristics ⁴
VDS=VGS, ID=250uA
VGS=4.5V, ID=2.8A
VGS=2.5V, ID=2A
VDS=5V, ID=3.6A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=6V, VGS=0V, f=1MHz
SI2300
N-Channel MOSFET
1.Gate
2.Source
3.Drain
SOT-23
D
G
S
Min. Typ. Max. Unit
20
-
-
V
-
-
1
uA
-
- ±100 nA
0.6
0.8
1.2
V
-
40
60
mΩ
-
50 115
-
10
-
S
-
426
-
PF
-
79.5
-
PF
-
56
-
PF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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