S9018W Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Plastic-Encapsulate Transistors
FEATURES
High current gain bandwidth product.
power dissipation.(PC=200mW)
S9018W(NPN)
Marking:J8
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
25
V_CEO
18
V_EBO
4
I_C
50
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min _{Typ Max Unit}
Collector-base breakdown voltage
V_CBO
I_C=100μA,I_E=0
25
V
Collector-emitter breakdown voltage _VCEO
I_C=0.1mA,I_B=0
18
V
Emitter-base breakdown voltage
V_EBO
I_E=-100μA,I_C=0
4
V
Collector cut-off current
I_CBO
V_CB=20V,I_E=0
0.1 μA
Collector cut-off current
I_CEO
V_CE=15V,I_B=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB=3V,I_C=0
0.1 μA
DC current gain
h_FE
V_CE=5V,I_C=1mA
70
190
Collector-emitter saturation voltage
V_CE(sat)
I_C=10 mA, I_B= 1mA
0.5 V
Base-emitter saturation voltage
Transition frequency
V_BE(sat)
f_T
I_C=10 mA, I_B= 1mA
V_CE=5V, I_C= 5mA
600
f=400MHz
1.4 V
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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