S9015 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP General Purpose Transistors

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9014
S9015 ^(PNP)
MARKING: M6
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-50
V_CEO
-45
V_EBO
-5
I_C
-0.1
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
VCBO IC= -100μA, IE=0
-50
Collector-emitter breakdown voltage
VCEO IC = -0.1mA, IB=0
-45
Emitter-base breakdown voltage
VEBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO VCB=-50 V, IE=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-5V, IC= -1mA
200
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -10mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
Transition frequency
VCE=-5V, IC= -10mA
fT
150
f=30MHz
Typ Max Unit
V
V
V
-0.1
μA
-0.1
μA
1000
-0.3
V
-1
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
L
200-450
H
450-1000
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1