S9014W Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Plastic-Encapsulate Transistors
FEATURES
Complementary To S9015W.
Excellent HFE Linearity.
Power dissipation.(P C=0.2W)
Marking:J6
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
50
V_CEO
45
V_EBO
5
I_C
100
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=0.1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-100μA,IC=0
Collector cut-off current
ICBO
VCB=50V,IE=0
Collector cut-off current
ICEO
VCE=35V,IB=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB=3V,IC=0
hFE
VCE=5V,IC=1mA
VCE(sat) ^{IC=100mA, IB= 5mA}
Base-emitter saturation voltage
Transition frequency
VBE(sat) ^{IC=100mA, IB= 5mA}
VCE=6V, IC= 20mA
fT
f=30MHz
S9014W (NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
Min _{Typ Max Unit}
50
V
45
V
5
V
0.1
μA
0.1
μA
0.1
μA
200
1000
0.3
V
1
V
150
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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