S9014 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN General Purpose Transistors

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9015
MARKING: J6
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
50
V_CEO
45
V_EBO
5
I_C
0.1
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC= 100μA, IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCEO
VEBO
IC= 0.1mA, IB=0
IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=50 V , IE=0
Collector cut-off current
ICEO
VCE=35V , IB=0
Emitter cut-off current
IEBO
VEB= 3V , IC=0
DC current gain
hFE
VCE=5V, IC= 1mA
Collector-emitter saturation voltage
VCE(sat) IC=100 mA, IB= 5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=100 mA, IB= 5mA
fT
VCE=5V, IC= 10mA
f=30MHz
CLASSIFICATION OF h_FE
Rank
Range
L
200-450
S9014 ^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
50
V
45
V
5
V
0.1
uA
0.1
uA
0.1
uA
200
1000
0.3
V
1
V
150
MHz
H
450-1000
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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