S9013 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9012
S9013 ^(NPN)
MARKING: J3
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
40
V_CEO
25
V_EBO
5
I_C
0.5
PC
0.3
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCBO
IC= 100μA, IE=0
40
VCEO
IC= 0.1mA, IB=0
25
VEBO
IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCE=20V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC= 50mA
120
hFE(2)
VCE=1V, IC=500mA
40
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=500mA, IB= 50mA
fT
VCE=6V, IC= 20mA
150
f=30MHz
CLASSIFICATION OF h_FE
Rank
L
Range
120-200
H
200-350
Typ Max Unit
V
V
V
0.1
uA
0.1
uA
0.1
uA
400
0.6
V
1.2
V
MHz
J
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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