S9012 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9013
MARKING: 2T1
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-25
V_EBO
-5
I_C
-0.5
PC
0.3
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
S9012 ^(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
L
Range
120-200
Symbol
Test conditions
Min
VCBO
IC= -100uA, IE=0
-40
VCEO
IC= -1mA, IB=0
-25
VEBO
IE=-100uA, IC=0
-5
ICBO
VCB=-40V, IE=0
ICEO
VCE=-20V, IB=0
IEBO
VEB= -5V, IC=0
hFE
VCE=-1V, IC= -50mA
120
VCE(sat) IC=-500mA, IB= -50mA
VBE(sat) IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
fT
150
f=30MHz
Cob
VCB=-10V,IE=0,f=1MHz
Typ Max Unit
V
V
V
-0.1 uA
-0.1 uA
-0.1 uA
400
-0.6
V
-1.2
V
MHz
5
pF
H
200-350
J
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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