S8550 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S8050
Collector current: I_C=0.5A
S8550 (PNP)
MARKING: S8550
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
-40
V
V_CEO
-25
V
V_EBO
-5
V
I_C
-500
mA
P_C
625
mW
T_J
150
Tstg
-55-150
1. S
2. G
TO-92
3. D
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
Test conditions
MIN
TYP
VCBO ^{IC= 100μA, IE=0}
-40
VOCEO
IC= 0.1mA, IB=0
-25
OVEBO
IE= 100μA, IC=0
-5
OICBO
VCB= 40 V , IE=0
ICOEO
VCE= 20 V , IB=0
IEOBO
VEB= 5V, IC=0
hFOE(1) VCE= 1V, IC= 50mA
85
hFE(2) VCE= 1V, IC= 500mA 50
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=500mA, IB=50mA
fT
VCE= 6V, IC=20mA
150
f =30MHz
CLASSIFICATION OF
Rank
Range
B
120-200
C
120-200
D
160-300
MAX
0.1
0.1
0.1
400
UNIT
V
V
V
μA
μA
μA
-0.6
V
-1.2
V
MHz
D1`
300-400
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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