S8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

Plastic-Encapsulate Transistors
FEATURES
Complimentary to S8550
MARKING: J3Y
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
40
V_CEO
25
V_EBO
5
I_C
0.5
PC
0.3
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC=1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40 V , IE=0
Collector cut-off current
ICEO
VCB=20V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
HFE(1)
HFE(2)
VCE=1V, IC= 50mA
VCE=1V, IC= 500mA
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=500 mA, IB= 50mA
VCE=6V,
f=30MHz
IC= 20mA
CLASSIFICATION OF h_FE
Rank
Range
L
120-200
H
200-350
S8050 ^(NPN)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
40
25
5
120
50
150
Typ Max Unit
V
V
V
0.1 uA
0.1 μA
0.1 μA
350
0.6
V
1.2
V
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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