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| RB751M-40 Datasheet, PDF (1/2 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – Schottky Barrier Diode | |||
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Plastic-Encapsulate Diodes
Schottky Barrier Diode
FEATURES
z For super-high speed switching circuit.
z For small current rectification.
z Allowing to rectify under(IF(AV)=200mA) condition.
z Allowing high-density mounting.
MAKING: 2B
RB751M-40
-
+
SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25â
Parameter
DC reverse voltage
Repetitive peak reverse voltage
Peak forward Current
Average forward Current
Non-repetitive peak forward Surge Current
Power Dissipation
Thermal resistance,junction to ambient air
Junction temperature
Storage temperature range
Symbol
VR
VRRM
IFM
IF(AV)
IFSM
Pd
RθjA
Tj
Tstg
Limits
30
30
300
200
1000
200
635
150
-55-150
Unit
V
V
mA
mA
mA
mW
â/W
â
â
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse leakage current
Reverse recovery time
Total capacitance
Symbol Conditions
Min.
V(BR)R
IR=10μA
30
VF
IF=200mA
IR
VR=30V
trr
IF= IR =100mA,
Irr=10mA,RL=100â¦
CT
VR=0V,f=1.0MHz
Typ.
3.0
30
Max.
0.55
50
Unit
V
V
μA
ns
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
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