PZTA94 Datasheet, PDF (1/2 Pages) Weitron Technology – High-Voltage PNP Transistor Surface Mount

FEATURES
High Voltage Driver Applications
Plastic-Encapsulate Transistors
PZTA94 (PNP)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
V_CEO
V_EBO
I_C
I_C
T_J
Tstg
-400
-400
-5
-200
1
150
-55 to +150
Unit
V
V
V
mA
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
IC=-0.1mA,IE=0
IC=-1mA,IB=0
IE=-0.1mA,IC=0
VCB=-400V,IE=0
VCE=-400V,IB=0
VEB=-4V, IC=0
VCE=-10V, IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-50mA
Collector-emitter saturation voltage
VCE(sat)
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-10mA,IB=-1mA
VCE=-20V,IC=-10mA, f=30MHz 5
Min Typ
-400
-400
-5
80
70
60
80
50
Max Unit
V
V
V
-100 nA
-5
uA
-100 nA
300
-0.2 V
-0.3 V
-0.75
V
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1