PZTA44 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

FEATURES
Low current : 300mA(max)
High voltage: VCEO=400V
Plastic-Encapsulate Transistors
PZTA44 (NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
V_CEO
V_EBO
I_C
I_C
T_J
Tstg
500
400
6
300
1
150
-55 to +150
Unit
V
V
V
mA
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
fT
CC
Ce
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=400V,IE=0
VEB=4V,IC=0
VCE=10V,IC=1mA
VCE=10V,IC=10mA
VCE=10V,IC=50mA
VCE=10V,IC=100mA
IC=1mA,IB=0.1mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
VCE=10V,IC=10mA,f=100MHz
VCB=20V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
Min Typ Max Unit
500
V
400
V
6
V
0.1
μA
0.1
μA
40
50
200
45
40
0.4
V
0.5
V
0.75
V
0.85
V
20
MHz
7
pF
180
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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