PZTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

FEATURES
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: PZTA92(PNP)
Plastic-Encapsulate Transistors
PZTA42 (NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
V_CEO
V_EBO
I_C
I_C
T_J
Tstg
300
300
6
500
1
150
-55 to +150
Unit
V
V
V
mA
W
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=100μA,IC=0
Collector cut-off current
ICBO VCB=200V,IE=0
Emitter cut-off current
IEBO VEB=6V,IC=0
DC current gain
hFE(1) VCE=10V,IC=1mA
hFE(2) VCE=10V,IC=10mA
hFE(3) VCE=10V,IC=30mA
Collector-emitter saturation voltage
VCE(sat) IC=20mA,IB=2mA
Base-emitter saturation voltage
VBE(sat) IC=20mA,IB=2mA
Transition frequency
fT
VCE=20V,IC=10mA,f=100MHz
Collector output capacitance
Cob VCB=20V,IE=0,f=1MHz
Min Typ Max Unit
300
V
300
V
6
V
0.1
μA
0.1
μA
25
40
40
0.5
V
0.9
V
50
MHz
3
pF
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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