PZT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available (PZT2907A)
Plastic-Encapsulate Transistors
PZT2222A (NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
40
6
600
1
150
-55 to +150
Units
V
V
V
mA
W
℃
℃
1. BASE
2. COLLECTO
3. EMITTER
SOT-223
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
unless otherwise specified)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
hFE(6)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
td
tr
tS
tf
Test conditions
IC= 10μ A,IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=60V,VBE(off)=3V
VEB= 3V , IC=0
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=1V, IC= 150mA
VCE=10V, IC= 500mA
IC=500mA, IB= 50mA
IC=150mA, IB= 15mA
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
VCE=20V,IC= 20mA, f=100MHz
VCB=10V, IE= 0,f=1MHz
VCC=30V, IC=150mA
VBE(off)=0.5V,IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2= 15mA
MIN
75
40
6
35
50
75
100
50
40
300
MAX
10
10
10
300
1
0.3
2.0
1.2
8
10
25
225
60
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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