PXT2907A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary NPN type available PXT2222A.
Ideal for medium power amplification and switching.
PXT2907A(PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
V_CBO
-60
V
V_CEO
-60
V
V_EBO
-5
V
I_C
-600
mA
P_C
500
mW
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
Test conditions
IC=-10μA IE=0
IC=-10mA IB=0
IE=-10μA IC=0
VCB=-50V IE=0
VEB=-5V,IC=0
VCE=-1V IC=-100mA
VCE=-1V IC=-1mA
VCE=-1V IC=-10mA
VCE=-2V IC=-150mA
VCE=-10V IC=-500mA
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
Base-emitter saturation voltage
VBE(sat)
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
Transition frequency
fT
VCE=-10V,
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
Cobo
Cibo
td
tr
ts
tf
VCB=-10V f=1.0MHz IE=0
VEB=-10V f=1.0MHz IC=0
VCE=-30V, IC=-150mA,
IB1=-15mA
VCE=-6V, IC=-150mA
IB1=-IB2=-15mA
Min Max
Unit
-60
V
-60
V
-5
μV
-10
nA
-50
nA
75
-
100 -300
100
-
100
50
-0.4
-1.6
V
-1.3
-2.6
V
200 IC=-20mA, f=100MMHHzz
-
8.0
pF
-
30
pF
10
ns
40
ns
80
ns
30
ns
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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