PXT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary NPN type available PXT2907A.
Ideal for medium power amplification and switching.
PXT2222A(NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
V_CBO
75
V
V_CEO
40
V
V_EBO
6
V
I_C
600
mA
P_C
500
mW
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test
conditions
Min
Collector-base breakdown voltage
VCBO
IC= 10μ A,IE=0
75
Collector-emitter breakdown voltage
VCEO
IC= 10mA, IB=0
40
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
6
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
Base-emitter saturation voltage
VBE(sat) IC=500mA, IB=50mA
VBE(sat) IC=150mA, IB=5mA
0.6
Transition frequency
VCE=10V, IC=20mA
fT
f=100MHz
300
Output Capacitance
Cob
VCB=10V, IE= 0,f=1MHz
Delay time
Rise time
Storage time
Fall time
td
VCC=30V, IC=150mA
tr
VBE(off)=0.5V,IB1=15mA
tS
VCC=30V, IC=150mA IB1=- IB2=
15mA
tf
Max
0. 01
0. 01
300
1
0.3
2.0
1.2
8
10
25
225
60
Unit
V
V
V
μA
μA
V
V
V
V
MHz
pF
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1