MMSTA92 Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Power dissipation.(PC=200mW)
Epitaxial planar die construction.
Complementary to MMSTA42.
Marking: K3R
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-300
V_CEO
-300
V_EBO
-5
I_C
-300
PC
300
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC=-100μA,I_E=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=-100μA,I_C=0
Collector cut-off current
ICBO
VCB=-200V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
VEB=-5V,IC=0
hFE
VCE(sat)
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-80mA
IC=-20mA, IB=-2mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=-20mA, IB=-2mA
fT
VCE=-20V,IC= -10mA,
f=30MHz
MMSTA92(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
Min Typ Max Unit
-310
V
-305
V
-5
V
-0.25 μA
-0.1 μA
60
100
200
60
-0.2
V
-0.9
V
50
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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