MMST5551 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary PNP type available(MMST5401).
Also available in lead free version.
MMST5551 (NPN)
Marking:K4N
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
V_CBO
180
Collector-Emitter Voltage
V_CEO
160
Emitter-Base Voltage
V_EBO
6
Collector Current -Continuous
I_C
600
Collector Power Dissipation
PC
300
Thermal resistance junction to ambient
RθJA
625
Storage Temperature
Tstg
-55 to +150
Unit
V
V
V
mA
mW
°C/W
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
IC=100μA,IE=0
IC=0.1mA,IB=0
IE=10μA,IC=0
IE = 0; VCB = 120V
IC = 0; VEB = 4V
DC current gain
VCE = 5V; IC= 1mA
h_FE
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50 Ma
Collector-emitter saturation voltage
V_CE(sat)
IC = 50 mA; IB = 5 mA
IC = 10 mA; IB = 1 mA
Base-emitter saturation voltage
V_BE(sat)
IC = 50 mA; IB = 5 mA
IC = 10 mA; IB = 1 mA
Transition frequency
IC = 10mA; VCE = 10V;
f_T
f = 100MHz
Min
180
160
6
-
-
80
80
30
Max Umit
50
nA
50
nA
-
250
-
0.2
-
0.15
V
1
-
1
V
80
MHz
-
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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