MMST5401 Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary PNP type available(MMST5551).
Also available in lead free version.
MMST5401 (PNP)
Marking:K4M
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
V_CBO
-160
Collector-Emitter Voltage
V_CEO
-150
Emitter-Base Voltage
V_EBO
-5
Collector Current -Continuous
I_C
600
Collector Power Dissipation
PC
200
Thermal resistance junction to ambient
RθJA
625
Storage Temperature
Tstg
-55 to +150
Unit
V
V
V
mA
mW
°C/W
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC=-100μA,I_E=0
Collector-emitter breakdown voltage
VCEO IC=-1mA,IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
VEBO
ICBO
IEBO
IE=-10μA,I_C=0
IE=0;VCB = -120V
IC=0; VEB = -3V
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Noise figure
VCE=-5V; IC=-1mA
hFE
VCE=-5V;IC=-10mA
VCE=-5V;IC=-50 mA
VCE(sat) _{IC=-50 mA; IB=-5mA}
IC=-10mA; IB=-1mA
VBE(sat) _{IC=-50mA;IB=-5Ma}
IC=-10mA; IB=-1mA
fT
IC=-10mA; VCE= -10V, f=100MHz
NF
IC=-200mA,VCE=-5.0V, f=100MHz
Min. Max Unit
-160
-150
-5
-
-50
nA
-
-50
nA
50
-2
60
40
50
-
-
-0.5
V
-0.2
-
-1
V
-1
100
300
MHz
8
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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