MMST4403 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary PNP type available(MMST4401).
Ultar-small surface mount package.
MMST4403 (PNP)
Marking:K3T
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
-40
V_CEO
-40
V_EBO
-5
I_C
-600
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Collector-base breakdown voltage
VCBO
IC=-100μA,I_E=0
-40
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
-40
Emitter-base breakdown voltage
VEBO
IE=-100μA,I_C=0
-5
Collector cut-off current
ICEX
VCE=-35V,VEB(OFF)=-0.4V
-0.1
Base cut-off current
IBL
VCE=-35V,VEB(OFF)=-0.4V
-0.1
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE=-1V,IC=-0.1mA
30
VCE=-1V,IC=-1.0mA
60
hFE
VCE=-1V,IC=-10mA
100
VCE=-2V,IC=-150mA
100
VCE=-2V,IC=500mA
20
VCE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VBE(sat)
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
fT
VCE=-10V,IC= -1.0mA, f=1.0kHz 200
300
-0.4
-0.75
-0.95
-1.3
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
8.5
Delay time
Td
VCC=-30V,VBE(off)=-2V,
15
Rise time
tr
IC=-150mA,IB1=-15mA
20
Storage time
Fall time
ts
VCC=-30V,IC=-150mA,
225
tf
IB1=IB2=-15mA
30
Unit
V
V
V
μA
μA
V
V
MHz
pF
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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