MMST4401 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction.
Complementary PNP type available(MMST4403).
Ultar-small surface mount package.
MMST4401 (NPN)
Marking:K3X
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
60
V_CEO
40
V_EBO
6
I_C
600
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Max
Collector-base breakdown voltage
VCBO
IC=100μA,I_E=0
60
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
VCEO
IC=1mA,IB=0
40
VEBO
IE=100μA,I_C=0
6
ICEX
VCE=35V,VEB(OFF)=0.4V
0.1
IBL
VCE=35V, VEB(OFF)=0.4V
0.1
DC current gain
VCE=1V,IC=0.1mA
20
VCE=1V,IC=1.0mA
40
hFE
VCE=1V,IC=10mA
VCE=1V,IC=150mA
80
100
300
VCE=2V,IC=500mA
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall time
VCE(sat)
VBE(sat)
fT
Cob
td
tr
ts
tf
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V, IE=20mA
f=100MHz
VCB=5V, IE=0,f=1MHz
VCC=30V,VBE=2V,
IC=150mA,IB=15mA
VCC=30V,IC=150mA,
IB1=IB2=15mA
0.4
0.75
0.95
1.2
250
6.5
15
20
225
30
Unit
V
V
V
μA
μA
V
V
MHz
pF
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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