MMST3906 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Power dissipation.(PC=0.2W)
Epitaxial planar die construction.
MMST3906(PNP)
Marking: K5N
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-40
V_CEO
-40
V_EBO
-5
I_C
-200
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
VCBO IC=-10μA,IE=0
-40
Collector-emitter breakdown voltage
VCEO _IC=-1mA,IB=0
-40
Emitter-base breakdown voltage
VEBO IE=-10μA,IC=0
-5
Collector cut-off current
ICBO VCB=-30V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
IEBO VEB=-5V,IC=0
hFE
VCE(sat)
VBE(sat)
fT
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,
IC=-50mA,
IC=-10mA,
IC=-50mA,
IB=-1mA
IB=-5mA
IB=-1Ma
IB=-5mA
VCE=-20V,IC= -10mA, f=100MHz
Cobo VCB=-5V,IE=0,f=1MHz
60
80
100
60
30
-0.65
250
Collector input capacitance
Ciob VCB=-5V,IE=0,f=1MHz
Noise figure
NF
VCE=-5V,IC=-0.1mA, f=1KHz,Rs=1KΩ
Delay time
Rise time
td
VCC=-3V,VBE=-0.5V,
tr
IC=-10mA,IB1=-1mA
Storage time
Fall time
ts
VCC=-3V,IC=-10mA, IB1=IB2=-1mA
tf
Max
-0.05
-0.05
300
-0.25
-0.4
-0.85
-0.95
4.5
10
4
35
35
225
75
UNit
V
V
V
μA
μA
V
V
MHz
pF
pF
dB
nS
nS
nS
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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