MMST3904 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Power dissipation.(P C=0.2W) APPLICATIONS
Audio frequency general purpose amplifier.
MMST3904(NPN)
Marking: K2N
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
40
V_EBO
5
I_C
200
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
unless otherwise specified)
Symbol
Test conditions
VCBO
IC=10μA,IE=0
VCEO
IC=1mA,IB=0
VEBO
ICBO
ICEO
IEBO
IE=10μA,IC=0
VCB=60V,IE=0
VCE=40V,IB=0
VEB=5V,IC=0
hFE
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
VCE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VBE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V, IE= 10mA
fT
f=100MHz
Collector output capacitance
Noise figure
Cob
NF
VCB=5V, IE=0,f=1MHz
VCE=5V,IC=0.1mA,
f=1KHz,Rg=1KΩ
Delay time
Rise time
td
VCC=3V,VBE=0.5V,
IC=10mA,IB=1mA
tr
Storage time
Fall time
ts
VCC=3V,IC=10mA,
IB1=IB2=1mA
tf
Min
60
40
5
40
70
100
60
30
0.65
Uax
0.05
0.5
0.05
300
0.25
0.3
0.85
0.95
Unit
V
V
V
μA
μA
μA
V
V
300
MHz
4
pF
5
dB
35
nS
35
nS
200
nS
50
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1