MMST2907 Datasheet, PDF (1/2 Pages) GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. – Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMST2222A)
MMST2907A (PNP)
Marking:K3F
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
-60
V_CEO
-60
V_EBO
-5
I_C
-600
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
VCBO
VCEO
VEBO
ICBO
ICES
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cobo
Cib
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VCB=-30V,IB=0
VEB=-3V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCB=-10V,IE=0,f=0.1MHz
VEB=-2V,IC=0,f=0.1MHz
VCC=-30V,VBE(off)=-1.5V,IC=-150mA
IB1==- 15mA
VCC=-30V,IC=-150mA,IB1=-IB2=-15mA
Min Typ Max Unit
-60
V
-60
V
-5
V
-100 n A
-100 nA
-100 nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-0.6
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
10
nS
40
nS
80
nS
30
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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