MMST2222A Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMST2907A)
MMST2222A (NPN)
Marking:K3P
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Storage Temperature
unless otherwise noted)
Symbol Value
V_CBO
75
V_CEO
40
V_EBO
6
I_C
600
PC
200
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-323
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
V(BR)CBO IC= 10μA, IE=0
75
V(BR)CEO IC= 10mA, IB=0
40
V(BR)EBO IE=10μA, IC=0
6
ICBO
VCB=70 V, IE=0
ICEO
VCE=35V , IB=0
IEBO
VEB= 3V , IC=0
hFE(1)
VCE=10V, IC=0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
hFE(5)
VCE=10V, IC= 500mA
40
hFE(6)
VCE=1V, IC= 150mA
35
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
VBE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA
fT
f=100MHz
300
Cob
VCB=10V, IE= 0,f=1MHz
td
VCC=30V, VBE(off)=-0.5V
tr
IC=150mA , IB1= 15mA
tS
VCC=30V, IC=150mA
tf
IB1=-IB2=15mA
Typ Max Unit
V
V
V
100
nA
100
nA
100
nA
300
1
0.3
V
2.0
1.2
V
MHz
8
pF
10
nS
25
nS
225
nS
60
nS
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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