MMDT5551 Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available(MMDT5401)
Ideal for Medium Power Amplification and Switching
MARKING: K4N
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
180
V_CEO
160
V_EBO
6
I_C
200
I_C
200
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol
Test conditions
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
IC=100μA,IE=0
IC=1mA , IB=0
IE=10μA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5 V, IC=1mA
VCE=5 V, IC=10mA
VCE=5 V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA,f=100MHz
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=0.2mA,
RS=1KΩ,f =1kHz
MMDT5551(NPN)
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
Min Typ
180
160
6
80
100
30
100
Max Unit
V
V
V
0.05
μA
0.05
μA
300
0.15
V
0.2
V
1
V
1
V
300 MHz
6
pF
8
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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