MMDT5401 Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available(MMDT5551)
Ideal for Medium Power Amplification and Switching
MMDT5401(PNP)
MARKING: K4M
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V_CBO
-160
V
Collector-Emitter Voltage
V_CEO
-150
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
I_C
-200
mA
I_C
200
mW
T_J
150
Tstg
-55 to +150
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol
Test conditions
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
IC=-100μA , IE=0
IC= -1mA , IB=0
IE=-10μA, IC=0
VCB=-120 V , IE=0
VEB=-3V , IC=0
VCE=-5 V, IC= -1mA
VCE=-5 V, IC= -10mA
VCE=-5 V, IC= -50mA
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
IC= -10 mA, IB=-1mA
IC= -50 mA, IB=-5mA
VCE= -10V, IC= -10mA,f = 100MHz
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200μA,
RS= 10Ω,f = 1.0kHz
Min Typ
-160
-150
-5
50
100
50
100
Max Unit
V
V
V
-0.05 μA
-0.05 μA
300
-0.2
V
-0.5
V
-1
V
-1
V
MHz
6
pF
8.0
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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